Title :
Ultra-shallow junction formation by outdiffusion from implanted oxide
Author :
Schmitz, J. ; van Gestel, M. ; Stolk, P.A. ; Ponomarev, Y.V. ; Roozeboom, F. ; van Berkum, J.G.M. ; Zalm, P.C. ; Woerlee, P.H.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
We present a new method for the fabrication of shallow n/sup +/ and p/sup +/ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.
Keywords :
CMOS integrated circuits; diffusion; elemental semiconductors; integrated circuit technology; ion implantation; p-n junctions; semiconductor doping; silicon; 30 to 100 nm; Si:B; Si:P; deep submicron CMOS process; diffusion step; dopant drive-in; electrical characteristics; implanted oxide; outdiffusion; physical characteristics; screening oxide implantation; shallow n/sup +/ junction fabrication; shallow p/sup +/ junction fabrication; sub-100 nm NMOS devices; ultra-shallow junction formation; Annealing; Boron; Computational modeling; Electrical resistance measurement; Fabrication; Implants; Ion implantation; MOS devices; MOSFETs; Silicon;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746525
