RF Characteristic and Modeling of the RF MEMS Switch Packaging

Author

Wu, Hanqin ; Liao, Xiaoping

Author_Institution

Key Lab. of MEMS, Southeast Univ., Nanjing

fYear

2006

fDate

26-29 Aug. 2006

Firstpage

1

Lastpage

4

Abstract

The RF characteristic of a RF MEMS switch with a package cap was studied in this paper based on simulation and analysis. Simulation was divided into two parts-the edge of the cap and the center of the cap, in order to observe the different effect level between the edge and the center of the cap on the switch. The thickness of the bonding layer and the depth of cavity were changed in simulations so as to detect the key factor which affects the effect level. We combined the simulation results with the microwave theory, calculated the changes of the switch impedance caused by the package cap. The simulated and calculated results were validated using the soft MicroWave Office

Keywords

bonding processes; electronics packaging; microswitches; RF MEMS switch packaging; RF characteristics; bonding layer; microwave theory; package cap; Bonding; Coplanar waveguides; Electronics packaging; Impedance; Microswitches; Microwave devices; Radio frequency; Radiofrequency microelectromechanical systems; Scattering parameters; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0619-6

Electronic_ISBN

1-4244-0620-X

Type

conf

DOI

10.1109/ICEPT.2006.359770

Filename

4198891