Title :
Si-based interband tunneling devices for high-speed logic and low power memory applications
Author :
Rommel, S.L. ; Dillon, T.E. ; Berger, P.R. ; Lake, R. ; Thompson, P.E. ; Hobart, K.D. ; Seabaugh, A.C. ; Simons, D.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA
Abstract :
This study extends the preliminary work of the authors, presenting improved epitaxially grown Si/Si/sub 0.5/Ge/sub 0.5//Si resonant interband tunnel diodes (RITDs) with current densities which exceed any previously reported for a Si-based NDR device. For the first time, the needs of Si-based TDTL circuits are beginning to be addressed, Two new classes of Si-based NDR devices are also reported here: Si-only RITDs and Si/Si/sub 0.5/Ge/sub 0.5/ heterojunction Esaki tunnel diodes with a digitally graded superlattice (DG-SL).
Keywords :
Ge-Si alloys; current density; elemental semiconductors; integrated logic circuits; integrated memory circuits; low-power electronics; resonant tunnelling diodes; semiconductor materials; semiconductor superlattices; silicon; NDR device; Si-Si/sub 0.5/Ge/sub 0.5/-Si; TDTL circuits; current densities; digitally graded superlattice; heterojunction Esaki tunnel diodes; high-speed logic; interband tunneling devices; low power memory; resonant interband tunnel diodes; tunnel diode/transistor logic circuits; CMOS logic circuits; CMOS technology; Current density; Diodes; Doping; III-V semiconductor materials; Logic devices; RLC circuits; Resonance; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746532
