Title :
Metallurgical Behavior of Au/Al Bond Interface during High Temperature Storage of Ultrasonic Wedge Bonding
Author :
Li, Mingyu ; Li, Song ; Ji, Hongjun
Author_Institution :
Harbin Inst. of Technol., Shenzhen Univ. Town
Abstract :
Ultrasonic wedge bonding, which can be done at room temperature, is widely used in microelectronic package. It is primarily used to bond either Al wire or Au wire. After bonding and aging, the joint cross-section of 25mum Au wire bonded on Al metallization pad was analyzed by SEM with EDX. It is found that, there was evident diffusion of Au and Al, and Au5Al2 intermetallic compound (IMC) formed first after aging for 10 days at 200 degC in atmosphere, and there was also some Au2Al formed at the edge of the interface. After aging for 20 days, the IMC developed slightly, and also Kirkendall voids generated at the interface. After aging for 30 days, the IMC began to transform to other Au-Al IMCs, and it became Au2 Al IMC finally after aging for 40 days
Keywords :
X-ray chemical analysis; ageing; aluminium alloys; gold alloys; high-temperature techniques; lead bonding; metallisation; scanning electron microscopy; ultrasonic bonding; voids (solid); 10 to 40 days; 200 C; 25 micron; Al metallization pad; Al wire; Au wire; Au-Al; Au/Al bond interface; EDX; Kirkendall voids; SEM; high temperature storage; intermetallic compound; ultrasonic wedge bonding; Aging; Atmosphere; Bonding; Gold; Intermetallic; Metallization; Microelectronics; Packaging; Temperature; Wire;
Conference_Titel :
Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0619-6
Electronic_ISBN :
1-4244-0620-X
DOI :
10.1109/ICEPT.2006.359783