• DocumentCode
    2576683
  • Title

    Numerical investigation of a SiGe HBT electro-optic modulator

  • Author

    Deng, Shengling ; Huang, Z. Rena ; Guo, J.-R. ; McDonald, J.F. ; Kraft, Russ P.

  • Author_Institution
    Dept. of Electr., Rensselaer Polytech. Inst., Troy, NY
  • fYear
    2009
  • fDate
    12-14 Jan. 2009
  • Firstpage
    14
  • Lastpage
    15
  • Abstract
    We analyzed an electro-optic modulator consisting of a heterojunction bipolar transistor (HBT) with graded SiGe composition in the base. Simulation shows single mode operation is attainable with an interaction length Ltautau of 40.8 mum.
  • Keywords
    Ge-Si alloys; electro-optical modulation; heterojunction bipolar transistors; HBT electro-optic modulator; SiGe; carrier injection; graded silicon germanium composition; heterojunction bipolar transistor; interaction length; single-mode transistor operation; Electrooptic modulators; Electrooptical waveguides; Germanium silicon alloys; Heterojunction bipolar transistors; Optical modulation; Optical ring resonators; Optical waveguides; Plasma devices; Refractive index; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE/LEOS Winter Topicals Meeting Series, 2009
  • Conference_Location
    Innsbruck
  • Print_ISBN
    978-1-4244-2610-2
  • Electronic_ISBN
    978-1-4244-2611-9
  • Type

    conf

  • DOI
    10.1109/LEOSWT.2009.4771632
  • Filename
    4771632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2576683