DocumentCode
2576933
Title
Most efficient alternative as a way of sub-80 nm contact holes and trenches formation
Author
Jung Hwan Hah ; Jin-Young Yoon ; Hata Mitsuhiro ; Hyun-Woo Kim ; Sang-Gyun Woo ; Han-Ku Cho ; Woo-Sung Han
Author_Institution
Semicond. R&D Div., Samsung Electron. Co. Ltd., Gyeonggi, South Korea
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
14
Lastpage
15
Abstract
In this paper, we compared three processes to confirm their feasibility and extract the weak and strong aspects of each process. Each process was evaluated with a mask having 1:1 square array and the isolated contact hole patterns of various contact CD and pitches and then its appropriate or best layout was determined or recommended for real device application.
Keywords
arrays; masks; nanocontacts; 80 nm; CD; contact holes; isolated contact hole patterns; mask; pitches; square array; trenches formation; Chemical processes; Chemical technology; Electronics industry; Lithography; Page description languages; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268495
Filename
1268495
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