Title :
In-situ observation of formation process of self-assembled Si islands on buried SiO2 and their crystallographic structures
Author :
Ikeda, Hiroya ; Ishikawa, Yasuhlko ; Homma, Yoshikazu ; Tabe, Michiharu
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
We observe the agglomeration of SOI and crystallographic structures using in-situ scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) in order to clarify the initial formation process of the Si islands and the crystallographic structures.
Keywords :
elemental semiconductors; island structure; scanning electron microscopy; self-assembly; silicon; silicon-on-insulator; transmission electron microscopy; SEM; SOI; Si-SiO/sub 2/; TEM; buried SiO/sub 2/; cross-sectional transmission electron microscopy; crystallographic structure; scanning electron microscopy; self-assembled Si islands; Annealing; Atomic layer deposition; Chemicals; Crystallization; Crystallography; Electrons; Fabrication; Fingers; Laboratories; Tunneling;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268497
