Title :
Characterization of electronic transport through Si dot with Ge core using AFM conducting probe
Author :
Darma, Y. ; Miyazaki, S.
Author_Institution :
Dept. of Electr. Eng., Hiroshima Univ., Japan
Abstract :
In this paper, to gain a better understanding of electronic transport through the dots consisting of the Si clad and the Ge core, we have extended our research to the investigation of the local electronic transport through the Si dot with Ge core on ultrathin SiO/sub 2/ layer.
Keywords :
atomic force microscopy; core levels; elemental semiconductors; germanium; semiconductor quantum dots; silicon; silicon compounds; valence bands; AFM conducting probe; Ge core; Si clad; Si dot; Si-Ge-Si; Si-SiO/sub 2/; electronic transport; ultrathin SiO/sub 2/ layer; Carrier confinement; Charge carrier processes; Chemical vapor deposition; Electron emission; Nonvolatile memory; Probes; Quantum dots; Single electron transistors; Surface topography; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268499
