Title :
Nano-scale device modeling and simulation: FinFET
Author :
Kidong Kim ; Ohseob Kwon ; Jihyun Seo ; Taeyoung Won
Author_Institution :
Dept. of Electr. Eng., Inha Univ., Inchon, South Korea
Abstract :
In this paper, two-dimensional quantum mechanical simulation of FinFET is reported. Current-voltage characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effect inculating the subthreshhold swing, threshold voltage rool-off, drain induced barrier lowering (DIBL). The QM simulation is compared with the classical approach in the order to understand the influenece of the electron confinement effect.
Keywords :
Poisson equation; field effect transistors; numerical analysis; semiconductor device models; drain induced barrier lowering; electron confinement effect; finFET; nanoscale device modeling; short-channel effect; subthreshhold swing; two-dimensional quantum mechanical simulation; Analytical models; Electrons; FinFETs; Finite difference methods; Mesh generation; Nanoscale devices; Numerical simulation; Poisson equations; Subthreshold current; Threshold voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268500
