Title :
Fabrication of combined structure of silicon single-electron pump with an extra island and MOSFET charge detector
Author :
Sang Jin Kim ; Ono, Y. ; Takahashi, Y. ; Jung Bum Choi
Author_Institution :
NTT Basic Res. Lab., NTT Corp., Atsugi, Japan
Abstract :
In this paper, we report the fabrication of combined structure of silicon single-electron pump with an extra island and MOSFET charge detector.
Keywords :
MOSFET; elemental semiconductors; island structure; silicon; silicon-on-insulator; single electron devices; MOSFET charge detector; Si; island structure; silicon single-electron pump; Charge measurement; Current measurement; Detectors; Electrons; Fabrication; Laboratories; MOSFET circuits; Monitoring; Silicon; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268501
