Title :
Optical properties of In/sub 0.8/Ga/sub 0.2/As self-assembled quantum dots on SiO/sub 2/-patterned [001] vicinal GaAs substrates
Author :
Hyo Jin Kim ; Motohisa, J. ; Fukui, T.
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
In this study, we investigated the optical properties of InGaAs SAQD on SiO/sub 2/-patterned exact and 5 /spl deg/-off [001] GaAs substrates. Also, we compared the discrete nature of the density of states in SAQDs for both starting materials.
Keywords :
III-V semiconductors; electronic density of states; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; silicon compounds; GaAs substrates; In/sub 0.8/Ga/sub 0.2/As self-assembled quantum dots; InGaAs; SiO/sub 2/-GaAs; density of states; optical properties; vicinal substrates; Filling; Gallium arsenide; Laser excitation; Optical saturation; Power lasers; Quantum dots; Stationary state; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268502
