Varactor-tuned planar W-band oscillator

Author

Buechler, J. ; Luy, J.F. ; Strohm, K.M.

Author_Institution

Tech. Univ. Munchen, West Germany

fYear

1989

fDate

13-15 June 1989

Firstpage

1205

Abstract

A planar, hybrid, integrated VCO (voltage-controlled oscillator) for the W-band has been fabricated on a high-resistivity (10000 Omega cm) silicon substrate. For this purpose an oscillator circuit for fixed-frequency CW (continuous wave) operation has been extended to obtain frequency variation by voltage control. Frequency variation is obtained by coupling a radial line sector to a disk resonator using a varactor diode. An Si quasi-read double-drift IMPATT diode is used as the active device. A hyperabrupt doping profile is used in the varactor diode. The chip size is 6*4.5 mm/sup 2/. A tuning range of 380 MHz around 80.2 GHz with an output power of 18 mW is obtained.<>

Keywords

IMPATT diodes; microwave oscillators; solid-state microwave circuits; variable-frequency oscillators; 18 MW; 80.2 GHz; Si; W-band; disk resonator; double-drift IMPATT diode; fixed-frequency CW; hyperabrupt doping profile; integrated VCO; output power; radial line sector; varactor diode; voltage-controlled oscillator; Coupling circuits; Diodes; Doping profiles; Frequency; Power generation; Silicon; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38941

Filename

38941