DocumentCode
2577095
Title
The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes
Author
Tsann-Bim Chiou ; Shih-En Tseng ; Chen, A.C.
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
32
Lastpage
33
Abstract
In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).
Keywords
aberrations; errors; masks; 45 nm; 65 nm; CD error; aberration; double exposure dipole; exposure tools; illuminator imperfections; image placement errors; pole intensity imbalance; Application specific integrated circuits; Costs; Error correction; Focusing; Integrated circuit manufacture; Integrated circuit technology; Lighting; Lithography; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268504
Filename
1268504
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