Title :
The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes
Author :
Tsann-Bim Chiou ; Shih-En Tseng ; Chen, A.C.
Abstract :
In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).
Keywords :
aberrations; errors; masks; 45 nm; 65 nm; CD error; aberration; double exposure dipole; exposure tools; illuminator imperfections; image placement errors; pole intensity imbalance; Application specific integrated circuits; Costs; Error correction; Focusing; Integrated circuit manufacture; Integrated circuit technology; Lighting; Lithography; Space technology;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268504
