Title :
Low temperature, atmospheric pressure plasma processing of materials
Author :
Hicks, R.F. ; Xiawan Yang ; Mooravej, M. ; Nowling, G. ; Babayan, S.
Author_Institution :
Chem. Eng. Dept., California Univ., Los Angeles, CA, USA
Abstract :
Summary form only given. In this paper, a low temperature, atmospheric pressure plasma source has been examined for the isotropic etching of photoresist, glass and metal film. In addition, the system has been configured for remote plasma enhanced chemical vapour deposition of silicon dioxide, silicon nitride and amorphous hydrogenated silicon.
Keywords :
amorphous semiconductors; elemental semiconductors; glass; metallic thin films; photoresists; plasma CVD; plasma materials processing; semiconductor growth; semiconductor thin films; silicon; silicon compounds; sputter etching; Si; Si/sub 3/N/sub 4/; SiO/sub 2/; amorphous hydrogenated silicon; atmospheric pressure plasma processing; glass; isotropic etching; low temperature plasma processing; metal film; photoresist; plasma enhanced chemical vapour deposition; silicon dioxide; silicon nitride; Atmospheric-pressure plasmas; Glass; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Plasma temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268508
