Title :
A 5 GHz CMOS low noise amplifier with a 3.25 turn spiral inductor for IEEE802.16a
Author :
Kalantari, Fatemeh ; Masoumi, Nasser ; Gholampour, Nafiseh ; Saeidi, Roghayeh
Author_Institution :
Fac. of Electr. Eng., Tehran Univ.
Abstract :
A 5.25-GHz low noise amplifier (LNA), has been proposed for use in a receiver architecture for IEEE 802.16a WMAN. The targeted frequency band is the unlicensed band UN11 5 GHz. The amplifier has been simulated with two different spiral inductor models as Ld. In our spiral inductor model we have improved "the Greenhouse spiral inductor model", then we compare the results with the case when we use the spiral inductor model of the technology. The amplifier achieves voltage gain of 16.4, 19.4 dB with a noise figure of only 1.5, 1.58 dB, the IIP3 is 14, 13.1-dBm and the reverse isolation is about -10.7, -13.2 dB for our spiral inductor model and that of technology, respectively. Using a 0.18 mum CMOS process, the LNA dissipates 7.2 mW from a 1.8 V supply voltage in both cases. In this paper, we present an analysis of the LNA architecture
Keywords :
CMOS analogue integrated circuits; MMIC; WiMax; inductors; low noise amplifiers; microwave amplifiers; radio receivers; 0.18 mum; 1.8 V; 16.4 dB; 19.4 dB; 5 GHz; 5.25 GHz; 7.2 mW; CMOS low noise amplifier; IEEE 802.16a; LNA; WMAN; receiver architecture; turn spiral inductor; CMOS process; CMOS technology; Frequency; Inductors; Isolation technology; Low-noise amplifiers; Noise figure; Semiconductor device modeling; Spirals; Voltage;
Conference_Titel :
Wireless Communications and Networking Conference, 2006. WCNC 2006. IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
1-4244-0269-7
Electronic_ISBN :
1525-3511
DOI :
10.1109/WCNC.2006.1696658
