A 5 GHz CMOS low noise amplifier with a 3.25 turn spiral inductor for IEEE802.16a

Author

Kalantari, Fatemeh ; Masoumi, Nasser ; Gholampour, Nafiseh ; Saeidi, Roghayeh

Author_Institution

Fac. of Electr. Eng., Tehran Univ.

Volume

4

fYear

2006

fDate

3-6 April 2006

Firstpage

2330

Lastpage

2334

Abstract

A 5.25-GHz low noise amplifier (LNA), has been proposed for use in a receiver architecture for IEEE 802.16a WMAN. The targeted frequency band is the unlicensed band UN11 5 GHz. The amplifier has been simulated with two different spiral inductor models as L_d. In our spiral inductor model we have improved "the Greenhouse spiral inductor model", then we compare the results with the case when we use the spiral inductor model of the technology. The amplifier achieves voltage gain of 16.4, 19.4 dB with a noise figure of only 1.5, 1.58 dB, the IIP₃ is 14, 13.1-dBm and the reverse isolation is about -10.7, -13.2 dB for our spiral inductor model and that of technology, respectively. Using a 0.18 mum CMOS process, the LNA dissipates 7.2 mW from a 1.8 V supply voltage in both cases. In this paper, we present an analysis of the LNA architecture

Keywords

CMOS analogue integrated circuits; MMIC; WiMax; inductors; low noise amplifiers; microwave amplifiers; radio receivers; 0.18 mum; 1.8 V; 16.4 dB; 19.4 dB; 5 GHz; 5.25 GHz; 7.2 mW; CMOS low noise amplifier; IEEE 802.16a; LNA; WMAN; receiver architecture; turn spiral inductor; CMOS process; CMOS technology; Frequency; Inductors; Isolation technology; Low-noise amplifiers; Noise figure; Semiconductor device modeling; Spirals; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications and Networking Conference, 2006. WCNC 2006. IEEE

Conference_Location

Las Vegas, NV

ISSN

1525-3511

Print_ISBN

1-4244-0269-7

Electronic_ISBN

1525-3511

Type

conf

DOI

10.1109/WCNC.2006.1696658

Filename

1696658