Title :
Use of plasma treatment in the sol-gel process of ferroelectric (Bi,La )/sub 4/Ti/sub 3/O/sub 12/ thin films for crystalline orientation control
Author :
Sugita, N. ; Boku, S. ; Tokumitsu, E.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
In this paper, we report a novel method and demonstrate that the crystalline orientation of ferroelectric Bi/sub 3.35/La/sub 0.75/Ti/sub 3/O/sub 12/ (BLT) thin films is drastically changed by the plasma treatment before the crystallization annealing during the sol-gel fabrication process.
Keywords :
annealing; bismuth compounds; crystallisation; crystallites; dielectric hysteresis; ferroelectric thin films; lanthanum compounds; plasma materials processing; sol-gel processing; Bi/sub 3.35/La/sub 0.75/Ti/sub 3/O/sub 12/; crystalline orientation; crystallization annealing; ferroelectric (Bi,La )/sub 4/Ti/sub 3/O/sub 12/ thin films; plasma treatment; sol-gel process; Argon; Bismuth; Crystallization; Ferroelectric materials; Nonvolatile memory; Plasma x-ray sources; Polarization; Position control; Random access memory; Transistors;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268511
