DocumentCode
2577257
Title
Microcrystalline silicon thin film formation using pulse modulated microwave plasma
Author
Homma, K. ; Yamamoto, M. ; Hori, M. ; Goto, T.
Author_Institution
Dept. of Quantum Eng., Nagoya Univ., Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
48
Lastpage
49
Abstract
In this paper, we have investigated the growth of /spl mu/c-Si:H thin films using the pulse modulated microwave plasma (MWP) with the SiF/sub 4/ addition. The crystallinity was investigated by Raman spectroscopy. The crystalline orientation was evaluated by X-ray diffraction (XRD). The Hall mobility was also evaluated.
Keywords
Hall mobility; Raman spectra; X-ray diffraction; amorphous semiconductors; elemental semiconductors; hydrogen; noncrystalline structure; plasma deposition; semiconductor growth; semiconductor thin films; silicon; /spl mu/c-Si:H thin film growth; Hall mobility; Raman spectra; Si:H; X-ray diffraction; XRD; crystalline orientation; crystallinity; microcrystalline silicon thin film; pulse modulated microwave plasma deposition; Crystallization; Plasma x-ray sources; Pulse modulation; Raman scattering; Semiconductor thin films; Silicon; Spectroscopy; Transistors; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268512
Filename
1268512
Link To Document