DocumentCode :
2577384
Title :
Short develop time process: effect of develop method and application of novel develop system
Author :
Sanada, M. ; Tamada, O. ; Harumoto, M.
Author_Institution :
Res. & Dev. Center, Dainippon Screen Mfg. Co. Ltd., Kyoto, Japan
fYear :
2003
fDate :
29-31 Oct. 2003
Firstpage :
64
Lastpage :
65
Abstract :
For shrinking CD, activities of increasing NA and shortening exposure wavelength have been promoted more and more in recent years, while it is mandatory to secure acceptable resist process latitude such as DOF. We previously reported that short develop time expanded the resist process latitude. It was strongly correlated to the resist develop rate and terminating the develop reaction at the moment the resist develop rate remained large was the key to improve resist process performances such as pattern collapse and defectivity as well as DOF and EL. The authors expect that behavior of developer solution discharged on the resist film has a large impact on the resist develop rate. The purpose of this paper, therefore, is to clarify the effect of the develop method (a static method and a dynamic method) which might affect the develop rate. Furthermore, in order to secure acceptable CD controllability we applied a novel develop application system to the short develop time process.
Keywords :
resists; CD; critical dimension; novel develop system; resist process; short develop time process; Controllability; Optical wavelength conversion; Research and development; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
Type :
conf
DOI :
10.1109/IMNC.2003.1268520
Filename :
1268520
Link To Document :
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