DocumentCode
2577384
Title
Short develop time process: effect of develop method and application of novel develop system
Author
Sanada, M. ; Tamada, O. ; Harumoto, M.
Author_Institution
Res. & Dev. Center, Dainippon Screen Mfg. Co. Ltd., Kyoto, Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
64
Lastpage
65
Abstract
For shrinking CD, activities of increasing NA and shortening exposure wavelength have been promoted more and more in recent years, while it is mandatory to secure acceptable resist process latitude such as DOF. We previously reported that short develop time expanded the resist process latitude. It was strongly correlated to the resist develop rate and terminating the develop reaction at the moment the resist develop rate remained large was the key to improve resist process performances such as pattern collapse and defectivity as well as DOF and EL. The authors expect that behavior of developer solution discharged on the resist film has a large impact on the resist develop rate. The purpose of this paper, therefore, is to clarify the effect of the develop method (a static method and a dynamic method) which might affect the develop rate. Furthermore, in order to secure acceptable CD controllability we applied a novel develop application system to the short develop time process.
Keywords
resists; CD; critical dimension; novel develop system; resist process; short develop time process; Controllability; Optical wavelength conversion; Research and development; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268520
Filename
1268520
Link To Document