DocumentCode :
2577446
Title :
High performance carbon-nanotube field-effect transistors
Author :
Nihey, Fumiyuki ; Hongo, Hiroo ; Ochiai, Yukinori ; Yudasaka, Masako ; Iijima, Sumio
Author_Institution :
Fundamental Res. Labs., NEC Corp., Tsukuba, Japan
fYear :
2003
fDate :
29-31 Oct. 2003
Firstpage :
72
Lastpage :
73
Abstract :
In this paper, we discuss the electrical performance of the carbon-nanotube field-effect transistor. We investigated the intrinsic performance of CNTFETs by using top-gates.
Keywords :
carbon nanotubes; contact resistance; electric admittance; electrical resistivity; insulated gate field effect transistors; C; carbon-nanotube field-effect transistors; electrical property; CNTFETs; Contact resistance; Electrodes; FETs; Fabrication; Iron; Laboratories; Materials science and technology; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
Type :
conf
DOI :
10.1109/IMNC.2003.1268524
Filename :
1268524
Link To Document :
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