• DocumentCode
    2577446
  • Title

    High performance carbon-nanotube field-effect transistors

  • Author

    Nihey, Fumiyuki ; Hongo, Hiroo ; Ochiai, Yukinori ; Yudasaka, Masako ; Iijima, Sumio

  • Author_Institution
    Fundamental Res. Labs., NEC Corp., Tsukuba, Japan
  • fYear
    2003
  • fDate
    29-31 Oct. 2003
  • Firstpage
    72
  • Lastpage
    73
  • Abstract
    In this paper, we discuss the electrical performance of the carbon-nanotube field-effect transistor. We investigated the intrinsic performance of CNTFETs by using top-gates.
  • Keywords
    carbon nanotubes; contact resistance; electric admittance; electrical resistivity; insulated gate field effect transistors; C; carbon-nanotube field-effect transistors; electrical property; CNTFETs; Contact resistance; Electrodes; FETs; Fabrication; Iron; Laboratories; Materials science and technology; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-040-2
  • Type

    conf

  • DOI
    10.1109/IMNC.2003.1268524
  • Filename
    1268524
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2577446