Title :
Optical anisotropy of semiconductor nanowires
Author :
Diedenhofen, S.L. ; Muskens, O.L. ; Bakkers, E. P A M ; Rivas, J. Gòmez
Author_Institution :
Philips Res. Labs. Eindhoven, FOM Inst. for Atomic & Mol. Phys. AMOLF, Eindhoven
Abstract :
A novel class of optically anisotropic materials is presented. Layers of semiconductor nanowires fabricated in a bottom-up process exhibit a large in-plane birefringence and show quarter-wavelength retardation for a wavelength of 690 nm. These nanowire metamaterials are promising materials for optical gas- and biosensing.
Keywords :
III-V semiconductors; biosensors; birefringence; gallium compounds; gas sensors; metamaterials; nanowires; optical materials; optical sensors; GaP; biosensing; in-plane birefringence; optical anisotropy; optical gas-sensing; optically anisotropic materials; quarter-wavelength retardation; semiconductor nanowires; wavelength 60 nm; Anisotropic magnetoresistance; Biological materials; Biomedical optical imaging; Biosensors; Birefringence; Geometrical optics; Metamaterials; Nanowires; Optical materials; Semiconductor materials;
Conference_Titel :
IEEE/LEOS Winter Topicals Meeting Series, 2009
Conference_Location :
Innsbruck
Print_ISBN :
978-1-4244-2610-2
Electronic_ISBN :
978-1-4244-2611-9
DOI :
10.1109/LEOSWT.2009.4771676
