DocumentCode
2577559
Title
Dynamics of 2D photonic crystal lasers
Author
Raineri, F. ; Yacomotti, A. ; Hostein, R. ; Braive, R. ; Beveratos, A. ; Sagnes, I. ; Raj, R.
Author_Institution
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis
fYear
2009
fDate
12-14 Jan. 2009
Firstpage
114
Lastpage
115
Abstract
Band-edge photonic crystal lasers were fabricated and their temporal characteristics were minutely analyzed using a high resolution up-conversion system. The InGaAs/InP 2D photonic crystal laser operates at room temperature at 1.55 mum showing possibility of modulating faster than 25 GHz.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical fabrication; optical modulation; photonic crystals; semiconductor lasers; 2D photonic crystal laser; InGaAs-InP; band-edge photonic crystal lasers; high resolution up-conversion system; laser dynamics; laser fabrication; laser modulation; temperature 293 K to 298 K; temporal characteristics; wavelength 1.55 mum; Indium gallium arsenide; Indium phosphide; Lattices; Optical devices; Optical refraction; Photonic crystals; Q factor; Silicon; Slabs; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE/LEOS Winter Topicals Meeting Series, 2009
Conference_Location
Innsbruck
Print_ISBN
978-1-4244-2610-2
Electronic_ISBN
978-1-4244-2611-9
Type
conf
DOI
10.1109/LEOSWT.2009.4771683
Filename
4771683
Link To Document