• DocumentCode
    2577563
  • Title

    The extraction of development parameters by using cross-sectional critical shape error method

  • Author

    Hyoung-Hee Kim ; Jun-Tack Park ; Jung-Wook Choi ; Insin An ; Hye-Keun Oh

  • Author_Institution
    Dept. of Phys., Hanyang Univ., Seoul, South Korea
  • fYear
    2003
  • fDate
    29-31 Oct. 2003
  • Firstpage
    84
  • Abstract
    Summary form only given. In this paper, we study the SEM images of several chemically amplified resists (CAR) and the simulation results were produced by cross-sectional critical shape error (CCSE) method.
  • Keywords
    error analysis; resists; scanning electron microscopy; semiconductor device models; SEM; chemically amplified resists; cross-sectional critical shape error method; extraction; Chemicals; Computational modeling; Data mining; Distributed computing; Lithography; Predictive models; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-040-2
  • Type

    conf

  • DOI
    10.1109/IMNC.2003.1268530
  • Filename
    1268530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2577563