DocumentCode
2577597
Title
Verification of phase defect correctability of EUV reflective multilayer
Author
Seung Yoon Lee ; Tae Geun Kim ; Jeong Hoon An ; Byung Hee Han ; Jea Gun Park ; Ji Gon Kim ; Chang Woo Lee ; Jinho Ahn
Author_Institution
Div. Mat. Sci. & Eng., Hanyang Univ., Seoul, South Korea
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
88
Lastpage
89
Abstract
In this paper we study the behavior of Mo/Si and Mo/Ru/Si multilayers during a defect correction. The stacking faults of multilayers degraded by uneven diffusion of Si through the Mo grain boundaries.
Keywords
diffusion; elemental semiconductors; grain boundaries; metallic thin films; molybdenum; multilayers; reflectivity; ruthenium; semiconductor thin films; silicon; stacking faults; ultraviolet lithography; EUV reflective multilayer; Mo-Ru-Si; Mo-Si; Mo/Ru/Si multilayers; Mo/Si multilayers; TEM; diffusion; grain boundaries; phase defect correctability; stacking faults; Annealing; Degradation; Grain boundaries; Heating; Light scattering; Nonhomogeneous media; Optical scattering; Reflectivity; Stacking; Ultraviolet sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268532
Filename
1268532
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