Enhance Extreme UltraViolet Lithography mask inspection contrast by using Fabry-Perot type antireflective coatings

Author

Cheng, H.C. ; Chen, H.L. ; Ko, T.S. ; Lai, L.J. ; Ko, F.H. ; Chu, T.C.

Author_Institution

Nat. Nano Device Lab., Hsinchu, Taiwan

fYear

2003

fDate

29-31 Oct. 2003

Firstpage

94

Lastpage

95

Abstract

In this paper, we demonstrate two antireflective coatings (ARC) structures enable the absorber stacks to meet the exposure and inspection requirements at the same time. The absorber stack is comprised of TaN or Cr and a single-layer antireflective coatings. Si/sub 3/N/sub 4/ layer is shown with lower reflectance and higher inspection contrast than SiO/sub 2/ layer. Fabry-Perot type ARC structures perform better contrast and thickness variation tolerance than the single-layer ARC structure.

Keywords

antireflection coatings; chromium; dielectric materials; inspection; masks; reflectivity; silicon compounds; tantalum compounds; Fabry-Perot type ARC structures; Fabry-Perot type antireflective coatings; Si/sub 3/N/sub 4/; TaN-Cr; absorber stacks; extreme ultraviolet lithography mask inspection; inspection; reflectance; single-layer antireflective coatings; thickness variation tolerance; Buffer layers; Chromium; Coatings; Fabry-Perot; Inspection; Lithography; Reflectivity; Semiconductor materials; Ultraviolet sources; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-040-2

Type

conf

DOI

10.1109/IMNC.2003.1268535

Filename

1268535