Title :
Enhance Extreme UltraViolet Lithography mask inspection contrast by using Fabry-Perot type antireflective coatings
Author :
Cheng, H.C. ; Chen, H.L. ; Ko, T.S. ; Lai, L.J. ; Ko, F.H. ; Chu, T.C.
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
Abstract :
In this paper, we demonstrate two antireflective coatings (ARC) structures enable the absorber stacks to meet the exposure and inspection requirements at the same time. The absorber stack is comprised of TaN or Cr and a single-layer antireflective coatings. Si/sub 3/N/sub 4/ layer is shown with lower reflectance and higher inspection contrast than SiO/sub 2/ layer. Fabry-Perot type ARC structures perform better contrast and thickness variation tolerance than the single-layer ARC structure.
Keywords :
antireflection coatings; chromium; dielectric materials; inspection; masks; reflectivity; silicon compounds; tantalum compounds; Fabry-Perot type ARC structures; Fabry-Perot type antireflective coatings; Si/sub 3/N/sub 4/; TaN-Cr; absorber stacks; extreme ultraviolet lithography mask inspection; inspection; reflectance; single-layer antireflective coatings; thickness variation tolerance; Buffer layers; Chromium; Coatings; Fabry-Perot; Inspection; Lithography; Reflectivity; Semiconductor materials; Ultraviolet sources; Writing;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268535
