DocumentCode :
2577657
Title :
The prediction of aerial image and CD variation due to imperfect mask in extreme ultraviolet lithography
Author :
Jong-Hoi Kim ; Sang-Jin Lee ; Joo-Heon Lee ; Young-Keun Kwon ; Myung-Sul Lee ; Seung-Wook Park ; Il-Sin An ; Hye-Keun Oh
Author_Institution :
Dept. of Phys., Hanyang Univ., Ansan, South Korea
fYear :
2003
fDate :
29-31 Oct. 2003
Firstpage :
96
Lastpage :
97
Abstract :
In this paper, we find a tolerance value which can maintain the processible aerial image is obtained, the error limit caused by mask structure on non-planar multilayer film and its data base is constructed. Consequently, the EUV source reflected from uneven and sloped mask, the resultant aerial image and CD variation caused by above effect is analyzed.
Keywords :
elemental semiconductors; masks; molybdenum; optical multilayers; reflectivity; silicon; ultraviolet lithography; EUV source; Mo-Si; aerial image; extreme ultraviolet lithography; imperfect mask; mask structure; nonplanar multilayer film; processible aerial image; tolerance value; Fabrication; Finite difference methods; Lithography; Mirrors; Nonhomogeneous media; Physics; Predictive models; Shadow mapping; Substrates; Ultraviolet sources;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
Type :
conf
DOI :
10.1109/IMNC.2003.1268536
Filename :
1268536
Link To Document :
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