Title :
Effect of Bi2O3 doping and CIP on ionic conductivity of scandia ceria stabilized zirconia
Author :
Nesova, E. ; Barbashov, V. ; Jebel, A. ; Komysa, Y.
Author_Institution :
Donetsk Phys. Tech. Inst., Donetsk, Ukraine
Abstract :
Effect of Bi2O3 doping and cold isostatic pressing (CIP ) on the ionic conductivity of the ceramics ZrO2 + 10 mol .% Sc2O3 + 1 mol. % CeO2 was studied. It was established that sintering the Bi2O3 doped ceramic specimens uses the lower temperatures after cold isostatic pressing (value of the sintering temperature was less than 400°C). CIP and sintering regimes (0.6 GPa ; 1100°C at 70 h) of specimens yielded high conductive and dense ceramics (0.028 S cm-1 at 800°C).
Keywords :
bismuth compounds; ceramics; cerium compounds; doping; ionic conductivity; pressing; scandium compounds; sintering; zirconium compounds; ZrO2-Sc2O3-CeO2:Bi2O3; ceramic; cold isostatic pressing; conductive ceramic; doped ceramic; doping; ionic conductivity; scandia ceria stabilized zirconia; sintering; Ceramics; Powders; Bi2O3; cold isostatic pressing; conductivity; doping; scandia ceria stabilize zirconia;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on
Conference_Location :
Lviv
Print_ISBN :
978-1-4799-5960-0
DOI :
10.1109/OMEE.2014.6912356
