Title :
Study on the Reliability of Capacitive Shunt RF MEMS Switch
Author :
Hou, Zhihao ; Liu, Zewen ; Hu, Guangwei ; Liu, Litian ; Li, Zhijian
Author_Institution :
Dept. of Microelectron. & Nanoelectronics, Tsinghua Univ., Beijing
Abstract :
Study on the reliability of capacitive shunt RF MEMS switch is present. The electrical failure and mechanical failure mechanism is analyzed separately. In the electrical failure analysis, the breakdown of dielectric between up- and down-electrode is measured and analyzed. In the measurement, a ramping DC voltage of 5Vs-1 is applied and different breakdown voltages are obtained. For the switches with electrode roughness of 27.4nm, 16.0nm and 5.4nm, the breakdown event maximum is in the voltage ranges of 20~40V, 30~60V and 80~110V respectively. In the mechanical failure analysed, the failure induced by stress is analysis. The failure samples of Al membrane broken and buckling are present. The best stress in Al membrane is at the range of 10~20MPa
Keywords :
aluminium; electric breakdown; failure analysis; microelectrodes; microswitches; reliability; 16.0 nm; 27.4 nm; 5.4 nm; Al; Al membrane; capacitive shunt RF MEMS switch; dielectric breakdown; electrical failure mechanism; electrode roughness; mechanical failure mechanism; Biomembranes; Breakdown voltage; Dielectric breakdown; Dielectric measurements; Electric variables measurement; Electrodes; Failure analysis; Radiofrequency microelectromechanical systems; Stress; Switches;
Conference_Titel :
Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0619-6
Electronic_ISBN :
1-4244-0620-X
DOI :
10.1109/ICEPT.2006.359877
