Title :
A model of staggered organic thin-film transistors with contact resistance
Author :
Rim, Tai-Uk ; Sohn, Chang-Woo ; Jeong, Yoon-Ha
Author_Institution :
Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
In this paper, we propose a current equation of organic thin-film transistors including a consideration of the contact resistance. The variable range hopping (VRH) model and the current crowding model are chosen for the charge transport of organic semiconductors and an effect of the contact resistance, respectively. The characteristic curves of our proposed model highly show consensus with the measured data. The contact resistance has more weight for the linear regime than for the saturation regime because charge carriers are crowded in the contact region between an electrode and the channel layer, so the carrier injection is decelerated due to the bottle-neck effect.
Keywords :
contact resistance; thin film transistors; carrier injection; channel layer; charge carriers; contact resistance; organic thin-film transistors; variable range hopping model; Contact resistance; Electrical resistance measurement; Electrodes; Equations; Organic semiconductors; Organic thin film transistors; Pentacene; Proximity effect; Thin film transistors; Voltage;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167524