Title :
The origin of gate hysteresis and gate delay of MESFETs appear under low frequency operation
Author :
Fujisaki, Y. ; Matsunaga, N.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The very slow response of MESFETs to the gate signal is investigated in relation to deep levels in a bulk crystal. It is demonstrated that this response originates from a complex of recombination centers and hole traps whose level is connected with arsenic vacancies. The activation energy of these traps is approximately 0.40 eV. This slow response is also attributable to the transconductance degradation under high-frequency MESFET operation. It is shown that the arsenic-poor composition of the crystal can be compensated by the P and SI coimplantation technique.<>
Keywords :
Schottky gate field effect transistors; deep levels; electron-hole recombination; As vacancies; MESFETs; P; Si; activation energy; bulk crystal; coimplantation technique; deep levels; gate delay; gate hysteresis; gate signal; hole traps; low frequency operation; recombination centers; transconductance degradation; Degradation; Delay; Electrodes; FETs; Frequency; Gallium arsenide; Hysteresis; MESFETs; Transconductance; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11065
