Title :
High pressure hydrogen annealing effect of CESL nitride stressor MOSFETs with metal gate/high-k dielectric on the performance and reliability
Author :
Min Sang Park ; Kyong Taek Lee ; Seung Ho Hong ; Seung Hyun Song ; Gil Bok Choi ; Rock Hyun Baek ; Hyun Sik Choi ; Hyun Chul Sagong ; Sung Woo Jung ; Chang Yong Kang ; Woo, B. ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
We present high pressure hydrogen annel (HPHA) effects in two types contact etch stop layer (CESL) nitride MOSFETs. Performances increased in both samples of using rapid thermal chemical vapor deposition (RTCVD) and plasma enhanced chemical vapor deposition (PECVD) nitride stress layers, but reliability only degraded in PECVD samples after HPHA.
Keywords :
MOSFET; annealing; high-k dielectric thin films; plasma CVD; semiconductor device reliability; CESL nitride stressor; MOSFET; PECVD; contact etch stop layer nitride; high pressure hydrogen annealing; metal gate/high-k dielectric; plasma enhanced chemical vapor deposition; rapid thermal chemical vapor deposition; semiconductor device reliability; Chemical vapor deposition; Etching; High-K gate dielectrics; Hydrogen; MOSFETs; Plasma applications; Plasma chemistry; Rapid thermal annealing; Thermal degradation; Thermal stresses;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167527
