Title :
Shunt-protected single-electron tunneling circuits fabricated on a quartz wafer
Author :
Lotkhov, Sergey V. ; Camarota, Benedetta ; Scherer, Hansjörg ; Weimann, Thomas ; Hinze, Peter ; Zorin, Alexander B.
Author_Institution :
Phys.-Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
We address fabrication challenges for the single-electron tunneling (SET) devices, based on ultrasmall junctions Al/AlOx/Al. Nanoscale SET components are known to be very fragile in respect to electrostatic breakdown, which turns out to be a critical problem for devices, fabricated on insulating substrates. For the breakdown prevention, we successfully realized on-chip silicon shunts, whose conductivity advantageously vanished at low temperatures, making possible undisturbed SET operation at T ~ 100 mK.
Keywords :
aluminium; aluminium compounds; electric breakdown; quartz; single electron devices; tunnelling; wafer-scale integration; Al-AlOx-Al; electrostatic breakdown; on-chip silicon shunts; quartz wafer; shunt protected single electron tunneling circuits; ultrasmall junctions; Circuits; Conductivity; Electric breakdown; Electrostatics; Fabrication; Insulation; Nanoscale devices; Silicon; Temperature; Tunneling; Single-electron tunneling; electron charge; electron-beam lithography; low-permittivity substrates;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167530
