مرکز منطقه ای اطلاع رساني علوم و فناوري - Growth and luminescent properties of (Tb,Gd)<inf>3</inf>Al<inf>5</inf>O<inf>12</inf>:Ce single crystalline films

DocumentCode :

257834

Title :

Growth and luminescent properties of (Tb,Gd)3Al5O12:Ce single crystalline films

Author :

Zorenko, Yu. ; Gorbenko, V. ; Zorenko, T. ; Vasylkiv, Ya. ; Fabisiak, K. ; Wrzesinski, H. ; Nikl, Martin ; Mares, J. ; Beitlerova, A. ; Kucerkova, R. ; Fedorov, A.

Author_Institution :

Inst. of Phys., Kazimierz Wielki Univ. in Bydgoszcz, Bydgoszcz, Poland

fYear :

2014

fDate :

26-30 May 2014

Firstpage :

149

Lastpage :

150

Abstract :

This work is dedicated to studying the growth processes and luminescent properties of the single crystalline films of Ce doped Tb_3-xGd_xAl₅O₁₂:Ce garnets, x=0÷2.5, grown by the Liquid Phase Epitaxy (LPE) method from melt-solutions based on the PbO-B₂O₃ flux.

Keywords :

cerium; epitaxial layers; gadolinium compounds; garnets; liquid phase epitaxial growth; photoluminescence; terbium compounds; Ce doped garnets; LPE method; Tb_3-xGd_xAl₅O₁₂:Ce; liquid phase epitaxy; luminescent properties; melt-solutions; single crystalline films; Substrates; (Tb, Gd)3Al5O12:Ce garnets; Ce³⁺ dopant; liquid phase epitaxy; single crystalline films;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on

Conference_Location :

Lviv

Print_ISBN :

978-1-4799-5960-0

Type :

conf

DOI :

10.1109/OMEE.2014.6912383

Filename :

6912383

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=257834