Title :
Growth and luminescent properties of Lu3(Ga,In)5O12:Eu3+ epitaxial films
Author :
Luchechko, A. ; Syvorotka, Ihor I. ; Zakharko, Ya. ; Syvorotka, Ihor M.
Author_Institution :
Fac. of Electron., Ivan Franko Nat. Univ. of Lviv, Lviv, Ukraine
Abstract :
High quality thin epitaxial films of Lu3(Ga,In)5O12:Eu3+ with high effective atomic number were grown by liquid phase epitaxy method. Excitation and emission spectra of Lu3(Ga,In)5O12:Eu3+ epitaxial films were studied under UV and X-ray excitations. The photo- and X-ray luminescence spectra of Eu3+ ions in Lu3(Ga,In)5O12:Eu3+ are characteristic to the f→f transition in the Eu3+ ions that occupied dodecahedral sites in the garnet structure. The ratio of the bands intensities in luminescence spectra under different types of excitation was determined.
Keywords :
X-ray spectra; epitaxial layers; europium; liquid phase epitaxial growth; lutetium compounds; photoluminescence; spectral line intensity; ultraviolet spectra; Lu3(GaIn)5O12:Eu; UV excitations; X-ray excitations; X-ray luminescence spectra; atomic number; band intensity; dodecahedral sites; emission spectra; excitation spectra; garnet structure; high quality thin epitaxial films; liquid phase epitaxy method; photoluminescence; Abstracts; Biomedical optical imaging; Epitaxial growth; Luminescence; Optical films; Optical imaging; Eu3+ ions; LPE; Lu3(Ga,In)5O12 garnet; epitaxial films; photo- and X-ray luminescence;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on
Conference_Location :
Lviv
Print_ISBN :
978-1-4799-5960-0
DOI :
10.1109/OMEE.2014.6912384
