• DocumentCode
    257840
  • Title

    Peculiarities of recharging process Yb2+ → Yb3+ in Yb:Y3Al5O12 epitaxial films under high temperature oxidation

  • Author

    Martynyuk, N. ; Buryy, O. ; Ubizskii, S. ; Syvorotka, I. ; Becker, K.D.

  • Author_Institution
    Lviv Polytech. Nat. Univ., Lviv, Ukraine
  • fYear
    2014
  • fDate
    26-30 May 2014
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    In this communication we analyze the reasons for distinctions of Yb2+ → Yb3+ recharging processes taking place in Yb:Y3Al5O12 epitaxial films and bulk crystals under high temperature annealing. Influence of sample surface structure on the rate of oxidation process was found to be significant.
  • Keywords
    annealing; epitaxial layers; garnets; high-temperature effects; oxidation; surface structure; ytterbium; yttrium compounds; YAG:Yb; Yb2+-Yb3+ recharging process peculiarities; bulk crystals; epitaxial films; high temperature annealing; high temperature oxidation; sample surface structure; Epitaxial growth; Gold; Ultrafast optics; oxidation kinetic; recharging of ions; ytterbium; yttrium-aluminum garnet (YAG);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on
  • Conference_Location
    Lviv
  • Print_ISBN
    978-1-4799-5960-0
  • Type

    conf

  • DOI
    10.1109/OMEE.2014.6912387
  • Filename
    6912387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=257840