Title :
Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-κ dielectric material
Author :
Sun, Jie ; Larsson, Marcus ; Maximov, Ivan ; Xu, H.Q.
Author_Institution :
Div. of Solid State Phys., Lund Univ., Lund, Sweden
Abstract :
Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.
Keywords :
Coulomb blockade; III-V semiconductors; atomic layer deposition; gallium arsenide; galvanomagnetic effects; indium compounds; semiconductor devices; Coulomb blockade effect; InGaAs-InP; atomic layer deposition; gate-defined quantum devices; high-kappa dielectric material; magnetotransport; spin pairs; Atomic layer deposition; Current measurement; Dielectric devices; Dielectric materials; Fabrication; Hafnium oxide; Indium gallium arsenide; Indium phosphide; Magnetic materials; Temperature measurement; High-κ dielectric; InGaAs/InP; Quantum devices;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167541
