Title :
Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs
Author :
Montgomery, Kyle H. ; Agarwal, Samarth ; Klimeck, Gerhard ; Woodall, Jerry M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Solar cells tuned for high energy photon absorption and light emitting diodes tuned for true green wavelength emission are proposed using the ZnSe/GaAs (001) superlattice. The effective band gap of this superlattice as a function of monolayers of ZnSe and GaAs within the range of 1.5 to 2.3 eV is shown. A discussion is given on the application of this particular superlattice in multijunction solar cells and solid-state lighting.
Keywords :
II-VI semiconductors; energy gap; gallium arsenide; light emitting diodes; semiconductor superlattices; wide band gap semiconductors; zinc compounds; ZnSe-GaAs; digital alloys; electron volt energy 1.5 eV to 2.3 eV; high band gap solar cells; high energy photon absorption; light emitting diodes; monolayers; superlattice; Absorption; Digital alloys; Gallium arsenide; Light emitting diodes; Photonic band gap; Photovoltaic cells; Proposals; Solid state lighting; Superlattices; Zinc compounds;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167542
