Title :
Photodetector based on GaN double-barrier resonant tunneling diode coupled with colloidal quantum dots
Author :
Liao, Sicheng ; Sun, Ke ; Dutta, Mitra ; Stroscio, Michael A.
Author_Institution :
Dept. of Phys., Univ. of Illinois at Chicago, Chicago, IL, USA
Abstract :
A novel design of photodetector device based on GaN double barrier resonant tunneling diode (DBRTD) coupled with a layer of colloidal quantum dots embedded in conductive polymer is proposed. The current-voltage characteristic of this new photon detector is calculated using the double-barrier quantum well (DBQW) model for different temperatures and widths of the well of the RTD. Possible effect of traps and defects at the polymer-semiconductor interface on the tunneling current is discussed.
Keywords :
II-VI semiconductors; III-V semiconductors; aluminium compounds; cadmium compounds; colloids; conducting polymers; gallium compounds; hole traps; photodetectors; quantum dots; resonant tunnelling diodes; semiconductor device models; semiconductor heterojunctions; semiconductor-insulator boundaries; surface states; wide band gap semiconductors; Al0.125Ga0.875N-Al0.25Ga0.75N-CdSe; DBRTD; colloidal quantum dots; conductive polymer; current-voltage characteristics; double-barrier quantum well model; double-barrier resonant tunneling diode; heterojunctions; hole traps; photodetector; polymer-semiconductor interface defects; polymer-semiconductor interface traps; tunneling current; Detectors; Gallium nitride; Medical signal detection; Photodetectors; Polymers; Quantum computing; Quantum dots; Resonance; Resonant tunneling devices; Semiconductor diodes; GaN; colloidal quantum dots; double barrier resonant tunneling diode; single-photon detection;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167550
