Title :
Influence of electron scattering on resolution in low dose electron beam lithography
Author :
Niu, H. ; Kotera, M.
Author_Institution :
Dept. of Electron., Inf. & Commun. Eng., Osaka Inst. of Technol., Asahi, Japan
Abstract :
In this paper, elastic scattering, inner-shell electron ionization and longitudinal phonon excitation was considered in the PMMA resist. In Si wafer, elastic scattering, inner-shell ionization, conduction band electron ionization and plasmon excitation were considered.
Keywords :
Monte Carlo methods; conduction bands; electron beam lithography; phonons; photon-electron scattering; plasmons; polymers; resists; PMMA resist; Si; Si wafer; conduction band electron ionization; elastic scattering; electron scattering; inner-shell electron ionization; longitudinal phonon excitation; low dose electron beam lithography; plasmon excitation; Chemical engineering; Chemical processes; Chemical technology; Electron beams; Ionization; Lithography; Phonons; Resists; Scattering parameters; Spatial resolution;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268602
