DocumentCode
2578674
Title
Influence of electron scattering on resolution in low dose electron beam lithography
Author
Niu, H. ; Kotera, M.
Author_Institution
Dept. of Electron., Inf. & Commun. Eng., Osaka Inst. of Technol., Asahi, Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
114
Lastpage
115
Abstract
In this paper, elastic scattering, inner-shell electron ionization and longitudinal phonon excitation was considered in the PMMA resist. In Si wafer, elastic scattering, inner-shell ionization, conduction band electron ionization and plasmon excitation were considered.
Keywords
Monte Carlo methods; conduction bands; electron beam lithography; phonons; photon-electron scattering; plasmons; polymers; resists; PMMA resist; Si; Si wafer; conduction band electron ionization; elastic scattering; electron scattering; inner-shell electron ionization; longitudinal phonon excitation; low dose electron beam lithography; plasmon excitation; Chemical engineering; Chemical processes; Chemical technology; Electron beams; Ionization; Lithography; Phonons; Resists; Scattering parameters; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268602
Filename
1268602
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