DocumentCode :
25787
Title :
A Low-Power 2.4-GHz Receiver Front End With a Lateral Current-Reusing Technique
Author :
Chao Chen ; Jianhui Wu ; Dan Huang ; Longxing Shi
Author_Institution :
Nat. ASIC Res. Center, Southeast Univ., Nanjing, China
Volume :
61
Issue :
8
fYear :
2014
fDate :
Aug. 2014
Firstpage :
564
Lastpage :
568
Abstract :
A 2.4-GHz current-reused receiver front end is presented in this brief. Instead of using the traditional stack-on current-reusing scheme that compresses the voltage headroom, the proposed front end employs a lateral current-shunt branch to share most of the dc bias current of the transconductance transistors in an LNA and a mixer. To prevent the signal interaction between the two modules, an LC tank is inserted into the current-reusing path to cut off the radio-frequency signal path between the LNA and the mixer. The IF signal blocking is realized by inserting a cascode transistor that provides large impedance for the IF signal from the mixer. Theory analysis and simulation results indicate that the current-reusing structure improves the noise performance and only a small impact on the voltage gain. A prototype of the proposed front end is designed and fabricated in the 130-nm CMOS process. Measurement results indicate that the front end achieved a conversion gain of 25 dB, a double-sideband noise figure of 3.5 dB, and a third-order input intercept point (IIP3) of -13 dBm at an input frequency of 2.4 GHz. The dc consumption of the front end is 3 mA under a supply voltage of 1.2 V.
Keywords :
LC circuits; receivers; transistors; CMOS process; DC bias current; IF signal blocking; LC tank; LNA; cascode transistor; current reused receiver front end; current reusing structure; double-sideband noise figure; frequency 2.4 GHz; lateral current reusing technique; lateral current shunt branch; mixer; radio frequency signal path; receiver front end; signal interaction; theory analysis; transconductance transistors; voltage gain; voltage headroom; Frequency measurement; Gain; Impedance; Mixers; Noise; Radio frequency; Transistors; Complimentary metal??oxide??semiconductor (CMOS); current reusing; low power consumption; radio frequency (RF) front end; receiver;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2014.2327344
Filename :
6823101
Link To Document :
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