Observation of ultraviolet and visible luminescence due to the presence of defect states in the forbidden bandgap of tin oxide nanowires.

Author

Kar, Ayan ; Stroscio, Michael A. ; Dutta, Mitra ; Kumari, Jyoti ; Meyyappan, M.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Illinois, Chicago, IL, USA

fYear

2009

fDate

2-5 June 2009

Firstpage

121

Lastpage

125

Abstract

Orange and Ultraviolet (UV) luminescence has been obtained from vapor-liquid-solid grown SnO₂ nanowires. The orange luminescence was found to be originating from the defect states in the forbidden bandgap and shows dependence on the nanowire diameter. Annealing of the nanowires under various conditions also seems to have an effect on their optical properties [1, 6]. Finally the origin of the UV luminescence has been investigated from which the donor and acceptor binding energies have been calculated.

Keywords

annealing; binding energy; defect states; impurity states; nanowires; photoluminescence; semiconductor materials; semiconductor quantum wires; tin compounds; SnO₂; acceptor; annealing; binding energies; defect states; donor; forbidden bandgap; optical properties; tin oxide nanowires; ultraviolet luminescence spectra; vapor-liquid-solid growth; visible luminescence spectra; Luminescence; Nanowires; Photonic band gap; Tin; Nanowires; Photoluminescence; TEM; Ultraviolet and Defect states;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Conference_Location

Traverse City, MI

Print_ISBN

978-1-4244-4695-7

Electronic_ISBN

978-1-4244-4696-4

Type

conf

DOI

10.1109/NMDC.2009.5167552

Filename

5167552