DocumentCode
2578722
Title
Highly Manufacturable 1Gb SDRAM
Author
Kim, K.N. ; Lee, J.Y. ; Lee, K.H. ; Nob ; Nam, S.W. ; Park, Y.S. ; Kim, Y.H. ; Kim, H.S. ; Kim, J.S. ; Park, J.K. ; Lee, K.P. ; Lee, K.Y. ; Moon, J.T. ; Choi, J.S. ; Park, J.W. ; Lee, J.G.
Author_Institution
Technology Development, Memory Device Business, Samsung Electronics Co., San #24, Nongseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, Korea
fYear
1997
fDate
10-12 June 1997
Firstpage
9
Lastpage
10
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN
4-930813-75-1
Type
conf
DOI
10.1109/VLSIT.1997.623669
Filename
623669
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