• DocumentCode
    2578722
  • Title

    Highly Manufacturable 1Gb SDRAM

  • Author

    Kim, K.N. ; Lee, J.Y. ; Lee, K.H. ; Nob ; Nam, S.W. ; Park, Y.S. ; Kim, Y.H. ; Kim, H.S. ; Kim, J.S. ; Park, J.K. ; Lee, K.P. ; Lee, K.Y. ; Moon, J.T. ; Choi, J.S. ; Park, J.W. ; Lee, J.G.

  • Author_Institution
    Technology Development, Memory Device Business, Samsung Electronics Co., San #24, Nongseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, Korea
  • fYear
    1997
  • fDate
    10-12 June 1997
  • Firstpage
    9
  • Lastpage
    10
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
  • Print_ISBN
    4-930813-75-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.1997.623669
  • Filename
    623669