Title :
Porous materials with ultra-low dielectric constant as antireflective coating layers for F/sub 2/ and ArF lithography
Author :
Chen, H.L. ; Wang, T.J. ; Liu, P.T. ; Ko, F.H. ; Chung, T.C.
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
Abstract :
In this paper, optical characteristics of porous MSQ were measured for BARC applications. Optical constants of porous MSQ are (1.432, 0.004) and (1.245, 0.454) at 193 and 157 nm, respectively. For 157 nm, the porous MSQ film has suitable optical characteristics as a BARC layer.
Keywords :
antireflection coatings; dielectric materials; dielectric thin films; optical constants; organic compounds; permittivity; photolithography; porous materials; reflectivity; 157 nm; 193 nm; ArF; ArF lithography; F/sub 2/; F/sub 2/ lithography; antireflective coating layers; optical constants; optical properties; porous MSQ films; porous materials; ultra-low dielectric constant; Coatings; Dielectric constant; Dielectric materials; Lithography; Optical films; Optical materials; Reflectivity; Semiconductor films; Semiconductor materials; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268606
