ESBT® power switch in high-power high-voltage converters

Recently available on the market the emitter switched bipolar transistor (ESBT) having high voltage breakdown, low voltage drop, and low switching losses as well, represents an interesting alternative to other power transistors thus giving a new chance to further improve the system efficiency. This paper deals with a new silicon technology used to produce a high voltage monolithic cascode and gives a way to drive the new device in low range power Applications (>lkW). Special focus has been dedicated to inverters and a perspective on the device use in DC/DC converters is given. The loss cutting allows either a strong equipment size reduction or a higher power while maintaining the size.