DocumentCode :
2578806
Title :
A Novel 1b Trench DRAM Cell With Raised Shallow Trench Isolation (RSTI)
Author :
Alsmeier, J. ; Kelleher, K.H. ; Beintner, J. ; Haensch, W. ; Mandelman, J.A. ; Hoh, P. ; Ninomiya, Y.L. ; Srinivasan, S. ; Bronner, G.
Author_Institution :
Siemens Components Inc
fYear :
1997
fDate :
10-12 June 1997
Firstpage :
19
Lastpage :
20
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
Type :
conf
DOI :
10.1109/VLSIT.1997.623674
Filename :
623674
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2578806
