Title :
A micromachined strain sensor with differential capacitive readout
Author :
Que, L. ; Li, M.-H. ; Chu, L.L. ; Gianchandani, Y.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
This paper describes a laterally deflecting micromachined device that can be used to electronically monitor residual strain and Young´s modulus of microstructural materials. Residual strain is indicated by a change in the differential capacitance change, whereas the Young´s modulus is provided by the slope of a simple CV (capacitance vs. voltage) test. The device is suitable for automated wafer level as well as post-packaging readout. Typical strain sensitivities are 0.1-1 fF/MPa, and the CV slope essentially doubles (e.g. from 0.23 fF/V to 0.47 fF/V at 70 V bias) as the Young´s modulus changes from 220 to 130 GPa. Nickel plated and polysilicon strain sensors were fabricated by surface micromachining techniques and coated with self-assembled monolayers using an ODS-based process. Both stress and Young´s modulus measurements from these structures were found to closely match theoretical models.
Keywords :
capacitive sensors; elastic moduli measurement; micromachining; microsensors; readout electronics; strain sensors; stress measurement; C-V test slope; Ni; Si; Young´s modulus; automated wafer level readout; capacitive sensors; device model; differential capacitive readout; electronic readout; laterally deflecting micromachined device; micromachined strain sensor; nickel plated sensors; polysilicon strain sensors; post-packaging readout; residual strain; self-assembled monolayers; strain sensitivity; surface micromachining; Accelerometers; Capacitance; Capacitive sensors; Gyroscopes; Microstructure; Monitoring; Packaging; Residual stresses; Strain measurement; Substrates;
Conference_Titel :
Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-5194-0
DOI :
10.1109/MEMSYS.1999.746888