Title :
Robustness and turn-off losses of high voltage IGBT
Author :
Eckel, H.-G. ; Bakran, M.M.
Author_Institution :
Siemens AG, Nuernberg
Abstract :
A simple model for the turn-off of high voltage IGBTs with long carrier lifetime is derived from the device physics. It is used to get a better understanding of the behavior of the device during the turn-off transient and the influence of the gate drive and a capacitive snubber. The peak electric field and the overvoltage are analyzed and special effects of field stop devices are discussed.
Keywords :
electric fields; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; capacitive snubber; carrier lifetime; electric fields; field stop devices; insulated gate bipolar transistors; turn-off loss; turn-off transient; Charge carrier lifetime; Charge carrier processes; Charge carriers; Electron mobility; Insulated gate bipolar transistors; Plasmas; Robustness; Snubbers; Space charge; Voltage; IGBT; Semiconductor device; Soft switching;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417229
