Title :
Patterning sub 100 nm isolated patterns with 436 nm lithography
Author :
Hanmin Yao ; Yu Guobin ; Peiying Yan ; Chen Xianzhong ; Xiangang Luo
Author_Institution :
Inst. of Opt. & Electron., Chinese Acad. of Sci., Chengdu, China
Abstract :
Summary form only given. In this paper, we propose a way to fabricate sub 100 nm isolated holes or lines with exposure wavelength of 436 nm. The masks are prepared by electron beam lithography and liftoff process.
Keywords :
electron beam lithography; masks; photolithography; surface plasmons; 100 nm; 436 nm; electron beam lithography; isolated patterns; liftoff process; masks; surface plasmons; Apertures; Corrugated surfaces; Lithography; Optical surface waves; Plasmons; Surface waves;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268610
