Title :
Patterning of GaAs by nanoelectrode lithography
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
In this paper, we presents results on the patterning of GaAs by nanoelectrode lithography. Electrochemical reaction and SEM image of GaAs surface were examined.
Keywords :
III-V semiconductors; electrochemistry; gallium arsenide; nanolithography; scanning electron microscopy; GaAs; GaAs surface; SEM; electrochemical reaction; nanoelectrode lithography; Conducting materials; Fabrication; Gallium arsenide; Lithography; Oxidation; Scanning electron microscopy; Semiconductor materials; Substrates; Ultraviolet sources; Wet etching;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268611
