Title :
Nanoimprint mold repair by Ga/sup +/ focused-ion-beam
Author :
Watanabe, Keiichiro ; Morita, Takahiko ; Kometani, Reo ; Kanda, Kazuhiro ; Haruyama, Yuichi ; Kaito, Takashi ; Matsui, Shinji
Author_Institution :
Graduate Sch. of Sci., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
We present a nanoimprint lithography (NIL) Si mold repair by Ga focussed ion beam (FIB). From the results, we conclude that a Si mold with projection and hollow defects can be repaired by Ga/sup +/ FIB. Ga appearance on a Si mold surface was clearly observed in NIL at over around 150 /spl deg/C.
Keywords :
chemical vapour deposition; elemental semiconductors; focused ion beam technology; moulding; nanolithography; silicon; sputter etching; 30 kV; Ga; Ga/sup +/ focused-ion-beam technology; Si; chemical vapour deposition; etching; nanoimprint Si mold repair; Chemical vapor deposition; Dry etching; Electron beams; Glass; Instruments; Lithography; Resists; Shape; Temperature dependence;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268617
