Title :
III-V compound semiconductor nanowires
Author :
Joyce, H.J. ; Paiman, S. ; Gao, Q. ; Tan, H.H. ; Kim, Y. ; Smith, L.M. ; Jackson, H.E. ; Yarrison-Rice, J.M. ; Zhang, X. ; Zou, J. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.
Keywords :
III-V semiconductors; MOCVD; catalysts; gallium arsenide; indium compounds; nanoparticles; nanotechnology; nanowires; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wires; GaAs; III-V compound semiconductor nanowire; InP; catalyst; crystal structure; epitaxial layer; metalorganic chemical vapor deposition; nanoparticles; nanowire diameter; nanowire growth; nanowire structure; Gallium arsenide; Gold; III-V semiconductor materials; Indium phosphide; MOCVD; Nanoparticles; Nanowires; Physics; Substrates; Temperature; III-V compound semiconductors; MOCVD; Nanowires;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167572
