III-V compound semiconductor nanowires

Author

Joyce, H.J. ; Paiman, S. ; Gao, Q. ; Tan, H.H. ; Kim, Y. ; Smith, L.M. ; Jackson, H.E. ; Yarrison-Rice, J.M. ; Zhang, X. ; Zou, J. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2009

fDate

2-5 June 2009

Firstpage

59

Lastpage

60

Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

Keywords

III-V semiconductors; MOCVD; catalysts; gallium arsenide; indium compounds; nanoparticles; nanotechnology; nanowires; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wires; GaAs; III-V compound semiconductor nanowire; InP; catalyst; crystal structure; epitaxial layer; metalorganic chemical vapor deposition; nanoparticles; nanowire diameter; nanowire growth; nanowire structure; Gallium arsenide; Gold; III-V semiconductor materials; Indium phosphide; MOCVD; Nanoparticles; Nanowires; Physics; Substrates; Temperature; III-V compound semiconductors; MOCVD; Nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Conference_Location

Traverse City, MI

Print_ISBN

978-1-4244-4695-7

Electronic_ISBN

978-1-4244-4696-4

Type

conf

DOI

10.1109/NMDC.2009.5167572

Filename

5167572